Mesubuta 110520 373 01 Hd New ((full)) -

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Current solutions (e.g., EMCCD, sCMOS) trade off either read‑noise, pixel size, or frame rate. The sensor aims to break this trade‑off by leveraging a backside‑illuminated (BSI) architecture , deep‑p‑well isolation , and on‑chip analog‑to‑digital conversion (ADC) with 16‑bit linearity . These digits serve as the core item catalog number

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The rapid growth of scientific imaging demands sensors that combine high spatial resolution, low read‑noise, and robust performance under extreme illumination conditions. This paper introduces the (hereafter M‑110520 ), a novel backside‑illuminated CMOS imaging sensor designed for high‑definition (HD) capture in photon‑starved environments. We describe the sensor architecture, fabrication process, and key performance metrics, and we benchmark M‑110520 against state‑of‑the‑art devices in astronomy, fluorescence microscopy, and low‑light surveillance. Experimental results demonstrate a quantum efficiency (QE) of 94 % at 560 nm , a read‑noise of 1.2 e⁻ RMS , and a full‑well capacity of 120 ke⁻ , enabling sub‑electron detection at video rates (30 fps) with 2 k × 2 k pixel format. The paper concludes with a discussion of potential integration pathways and future enhancements.

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